Outstanding Advantages of MPCVD Equipment for Diamond Film Deposition Applications

At present, there are many ways to deposit diamond film, why mpcvd equipment can stand out in the many equipment, as committed to microwave plasma equipment research and development for 20 years of MPCVD manufacturers, HUERAY  microwave for you to reveal the secret:

Diamond is also known as a semiconductor, which is because it has a wide band gap and high breakdown electric field and high carrier mobility and high thermal conductivity. However, in the process of enterprise use, a large number of large-size and high-quality single-crystal diamond is required, which has become the main bottleneck restricting its application. Therefore, in the continuous attempt and endeavour, MPCVD equipment has become one of the promising technologies among many preparation methods due to some overwhelming advantages such as its microwave energy is not polluted, the gas raw material is relatively pure and there is no adulteration of catalysts and impurities, etc. MPCVD equipment is mainly an electrodeless discharge, so the plasma is pure, and at the same time, it has a concentrated and non-extended microwave discharge area, so it is can activate the generation of various atomic groups such as atomic hydrogen, etc. The large kinetic energy of the generated ions is low, so it will not etch the generated diamond and play a protective role for diamond.

As the microwave power of MPCVD equipment is adjusted continuously and gently, the deposition temperature can be changed continuously and stably, which makes the equipment overcome the shortcomings of DC plasma-jet CVD due to the ignition and extinguishing of the arc, and the huge thermal shock to the substrate and diamond film, which causes the diamond film to fall off from the substrate easily, and makes the diamond film not easy to fall off. And compared with the hot wire method HFCVD, MPCVD equipment avoids the hot wire method because of the hot wire evaporation of the diamond film contamination, as well as the hot wire of strong corrosive gases, such as some of the high concentration of oxygen and halogen gases, etc., the shortcomings of the hot wire method is very sensitive, so that in the process of reaction gases can be used in the process of many more kinds of reaction gases than in the HFCVD, it will cause some unnecessary losses. Compared with the oxygen-acetylene combustion flame method, through the structural adjustment of the structure of the MPCVD deposition reaction chamber, a large and stable plasma sphere can be generated in the deposition chamber, which is conducive to the large-area and uniform deposition of diamond film, and thus the superiority of the microwave plasma method of diamond film preparation by the MPCVD equipment appears to be very prominent among all the equipment.